What is the value of knee voltage of silicon diode

what is the value of knee voltage of silicon diode


Feb 20, - What is the value of knee voltage of silicon diode?a) Vb) Vc) Vd) VCorrect answer is 'C'. Can you explain this answer? | EduRev Railways Question is disucussed on EduRev Study Group by Railways Students. What is the value of knee voltage of silicon diode? 1) V: 2) V: 3) If the current and the voltage are out of phase by 90 degree, then the power is.

This effect is called electroluminescence and the color of the light corresponding to the energy of photon is determined by energy gap of the Semiconductor. Electroluminescence as a phenomenon was discovered in by the British experimenter H. His research was distributed in Soviet, German and British scientific journals, but no practical sklicon was made of siilicon discovery for several decades. Kurt LehovecCarl Accardoand Edward Jamgochian explained these first light-emitting diodes in using an apparatus employing SiCcrystals with a current source of battery or pulse generator and with a comparison to a variant, pure, crystal in First recognized in by Max Planck.

Large-area LED displays are used as stadium displays, dynamic decorative displays, and dynamic message signs on vwlue. Thin, lightweight message displays are used at airports whah railway stations, and as destination displays for how to clean an ipod screen and buses. LEDs are used as what is the value of knee voltage of silicon diode lights.

They are also used in handheld devices such as flashlights. LED strobe lights or camera flashes. The LEDs are used extensively in optical fiber and free space optics communications. Like a normal diode, the LED consists of a chip of semiconducting material doped with impurities to create a p-n junction. As in other diodes, current flows easily from the p-side, or anode, to the n-side, or cathode, but not in the reverse direction. Charge-carriers—electrons and holes—flow into the junction from electrodes with different voltages.

What is the value of knee voltage of silicon diode an electron meets a hole, it falls into a lower energy level and how to lose bloat weight fast energy in the form of a photon.

The wavelength of the light emitted, and thus its colour, depends on the band gap energy of the materials forming the p-n junction. The materials used for the LED have a direct band valhe with energies corresponding to near-infrared, visible, or near-ultraviolet light.

The following table shows the available colours with wavelength range, voltage drop, and material:. An LED is a two-terminal semiconductor light source. In the unbiased condition a potential barrier is developed across the p-n junction of the LED. When we connect the LED to an external voltage in the forward biased direction, the height of potential barrier across the p-n junction is reduced. At a particular voltage the height of potential barrier becomes very low and the LED starts glowing, i.

This particular voltage is called the knee voltage i the threshold voltage. Once the knee voltage is reached, the current may increase but the voltage does not change. If V 0 is the forward voltage applied across the LED when it begins to emit light the knee voltagethe energy given to electrons crossing the junction is. November 10, November 9, Your email address will not be published.

Save my name, email, and website in this browser for the next time I comment. Skip to content Physics Project 0. Voltage range — 1 to 2 volts. Current — 5 to 20 milliamperes. The response time is very os — only about 10 nanoseconds. The device does not need any heating and warm up time. Miniature in size and hence light weight. The device is known to have a much wider bandwidth compared to the laser. The temperature depends on the radiant output power and wavelength.

Lighting LEDs are used as street lights. LED strobe lights or camera flashes Data communication and other signaling Other applications The LEDs are used extensively in optical fiber and free space optics communications. Insert the key to start the experiment. Adjust the rheostat value till the LED starts glowing, or in the case of the IR diode, whose light is not visible, until the ammeter indicates that current has begun to increase.

Corresponding voltage across the LED is measured using a voltmeter, which is the knee voltage. Repeat, by changing the LED and note down the corresponding knee voltage.

Factors affecting internal resistance of a cell November 9, Find refractive index of different liquids using hollow prism November 10, Leave a Reply Cancel reply Your email address will not be published.

Knee voltage L.

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Dec 11,  · The knee voltage value for ‘Si’ diode is volts & for ‘Ge’ diode it will be Knee Voltage Formula. The knee point voltage of ct can be calculated using the following formula. Vkp = K * If/CTR x (RCT + RL + RR) Where, K = Constant, usually taken as Vkp = The least Knee Point Voltage. If = Utmost fault current at the position in AmperesEstimated Reading Time: 4 mins. The knee voltage for a silicon diode is approximately volt and for a germanium diode volt. If the knee voltage is higher, the diode conducts easily If the knee voltage is lower, the diode conducts poorly A semiconductor diode’s behavior in a circuit is given by its current–voltage characteristic, or I–V graph. Knee voltage, or threshold voltage, varies with the device construction, doping level, and operating temperature among other healthgrabber.us is due to the bandgap at the PN junctions of the healthgrabber.usore, even forward biased, little current will follow until the diodes threshold voltage is healthgrabber.usold voltage for common silicon diodes is approximately V, and for Schottky .

Diode is a nonlinear device. This is demonstrated in the following graph, and the fact that its current versus voltage is not a straight line.

In the forward region of the graph, the voltage at which the current starts to increase quickly is called the knee voltage of the diode. Study of a diode circuit usually comes down to determining if the diode voltage is higher or lower than the knee voltage. The knee voltage for a silicon diode is approximately 0. If the knee voltage is higher, the diode conducts easily.

If the knee voltage is lower, the diode conducts poorly. The shape of the curve is determined by the transport of charge carriers through the so-called depletion layer or depletion region that exists at the p—n junction between differing semiconductors. When a p—n junction is first created, conduction-band mobile electrons from the N- doped region diffuse into the P- doped region where there is a large population of holes vacant places for electrons with which the electrons "recombine".

When a mobile electron recombines with a hole, both hole and electron vanish, leaving behind an immobile positively charged donor dopant on the N side and negatively charged acceptor dopant on the P side. The region around the p—n junction becomes depleted of charge carriers and thus behaves as an insulator. However, the width of the depletion region called the depletion width cannot grow without limit.

For each electron—hole pair that recombines, a positively charged dopant ion is left behind in the N-doped region, and a negatively charged dopant ion is left behind in the P-doped region. As recombination proceeds more ions are created, an increasing electric field develops through the depletion zone that acts to slow and then finally stop recombination. At this point, there is a "built-in" potential across the depletion zone. This is the reverse bias phenomenon. However, if the polarity of the external voltage opposes the built-in potential, recombination can once again proceed, resulting in substantial electric current through the p—n junction i.

For silicon diodes, the built-in potential is approximately 0. Thus, if an external current is passed through the diode, about 0. At very large reverse bias, beyond the peak inverse voltage or PIV, a process called reverse breakdown occurs that causes a large increase in current i. The avalanche diode is deliberately designed for use in the avalanche region.

In the Zener diode , the concept of PIV is not applicable. A Zener diode contains a heavily doped p—n junction allowing electrons to tunnel from the valence band of the p-type material to the conduction band of the n-type material, such that the reverse voltage is "clamped" to a known value called the Zener voltage , and avalanche does not occur.

Both devices, however, do have a limit to the maximum current and power in the clamped reverse-voltage region. Also, following the end of forward conduction in any diode, there is reverse current for a short time. The device does not attain its full blocking capability until the reverse current ceases. The second region, at reverse biases more positive than the PIV, has only a very small reverse saturation current.

However, this is temperature dependent, and at sufficiently high temperatures, a substantial amount of reverse current can be observed mA or more. The third region is forward but small bias, where only a small forward current is conducted. The current—voltage curve is exponential. In a normal silicon diode at rated currents, the arbitrary cut-in voltage is defined as 0. The value is different for other diode types— Schottky diodes can be rated as low as 0. Analog circuits measurements. General view.

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